Abstract
Abstract Metal–semiconductor–metal-structured GaN ultraviolet photodetectors have been fabricated on sapphire substrates by metalorganic chemical vapor deposition. The properties of GaN photodetectors have been improved through thermal annealing. With a 3 V bias, the very low dark current is about 200 pA, the maximum responsivity of 0.19 A/W is achieved at 362 nm, and the corresponding detectivity is 1.2×1011 cm Hz1/2/W. The physical mechanism of the effects of thermal annealing also has been studied.
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