Abstract
Metalorganic chemical vapor deposition (MOCVD) growth of Pb(Zr,Ti)O 3 (PZT) thin films employing a two-step growth process was investigated. In the two-step growth process, the effects of the utilization of a PbTiO 3 buffer layer on the succeeding growth of PZT thin films were observed. The orientation of the PZT thin films was controlled by changing the orientation of the PbTiO 3 buffer layer deposited on the substrate. The degree of orientation of PZT was also influenced by the use of a PbTiO 3 buffer layer. From atomic force microscope (AFM) observations, it was found that the main growth mechanism of (111)-oriented PbTiO 3 was two-dimensional growth and that the PbTiO 3 buffer layer played an important role as dense nuclei in the succeeding PZT growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
