Abstract
Metalorganic chemical vapor deposition (MOCVD) growth of Pb(Zr,Ti)O 3 (PZT) thin films employing a two-step growth process was investigated. In the two-step growth process, the effects of the utilization of a PbTiO 3 buffer layer on the succeeding growth of PZT thin films were observed. The orientation of the PZT thin films was controlled by changing the orientation of the PbTiO 3 buffer layer deposited on the substrate. The degree of orientation of PZT was also influenced by the use of a PbTiO 3 buffer layer. From atomic force microscope (AFM) observations, it was found that the main growth mechanism of (111)-oriented PbTiO 3 was two-dimensional growth and that the PbTiO 3 buffer layer played an important role as dense nuclei in the succeeding PZT growth.
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