Abstract
A study of morphological and composition changes of the WTi/Si system induced bynanosecond and picosecond laser pulses is presented. A 190 nm thick WTi film was depositedon a silicon substrate of n-type (100). The pulsed laser systems used were: nanosecond TEACO2 laser(emission, 10.6 µm; pulse FWHM; pulse duration 120 ns) and picosecond Nd:YAG laser (emission,532 nm; pulse FWHM; pulse duration 40 ps). During experiments the used fluences (Φ) had similarvalues, Φ1 = 20 J cm − 2 in caseof the TEA CO2 laser and Φ2 = 16 J cm − 2 for the Nd:YAG laser. The laser-induced morphological and composition modificationsshowed a dependence on pulse duration. Generally, the following morphological changeswere observed: (i) ablation/exfoliation of the WTi thin film, (ii) appearance of hydrodynamicfeatures such as resolidified material, and (iii) formation of nano-sized grains and globules.Overall morphological modifications were more pronounced after the picosecond laseraction. The surface composition analysis showed a quite different distribution of samplecomponents depending on the pulse duration. Formation of the silicon dioxide (SiO2) was recorded only in the case of irradiation of the WTi/Si system by picosecond laserpulses.
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