Abstract
Zinc sulfide oxide Zn(O,S) buffer layers were prepared by a chemical bath deposition (CBD) method, and the effects of the deposition time on the structure and performance of the Cu(In,Ga)Se2 (CIGS) solar cells were investigated by structural, optical and electrical characterizations. The CBD deposition time affected the thickness and morphology of the Zn(O,S) layer, and the thickness and surface roughness decreased by decreasing the deposition time. The conversion efficiency of 15.5% has been obtained for the CIGS solar cells with the Zn(O,S) buffer layer prepared under optimized condition.
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