Abstract
Green-light-emission InGaN∕GaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.
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