Year-end Sale % OFF 
Abstract
In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
