Abstract

The effect of different surface morphologies obtained by anisotropic etching on the light trapping and short circuit current of single crystalline silicon solar cells was investigated. The anisotropic texturing of a (1 0 0) silicon surface was performed using potassium hydroxide (KOH) solution and/or tetramethylammonium hydroxide (TMAH) solution including isopropyl alcohol (IPA) additive or tertiary butyl alcohol (TBA) additive. Texturing in TMAH solution formed smaller pyramids on the textured surface compared with texturing in KOH solution. Although the textured samples showed similar reflectances (except in the case of the TBA additive), they showed different short circuit currents. Texturing in KOH/TMAH solution led to a 9.6% increase in short circuit current compared with texturing in KOH/IPA solution, a typical etchant in commercial processes. Based on these results, the reflectivity has no simple proportionality relationship to the short circuit current, and the short circuit current of silicon solar cells should be the criterion used in evaluating texturing effects on reducing reflectance and forming a sound junction with high collection efficiency.

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