Effects of tertiary butyl substitution on the charge transporting properties of rubrene-based films

Abstract

Abstract The charge transporting properties of rubrene (5,6,11,12-tetraphenylnaphthacene or RB), and a new rubrene-based complex, tetra( t -butyl)-rubrene [2,8-di( t -butyl)-5,11-di[4-( t -butyl)phenyl]-6,12-diphenylnaphthacene or TBRB], were examined in the form of amorphous films as functions of electric field and temperature by means of time-of-flight technique. At room temperature, the hole mobility μ for RB is 7–9 × 10 −3 cm 2 V −1 s −1 whereas μ for the more bulky TBRB is about 2 × 10 −3 cm 2 V −1 s −1 . The microscopic conduction mechanism in both materials can be modeled by the Gaussian disorder model in which hopping conduction occurs through a manifold of sites with energetic and positional disorder. The energetic disorder in RB and TBRB is almost identical and is about 78 meV in each case, and is mainly controlled by van der Waals interaction. The t -butyl groups in TBRB induce large fluctuations in the spatial separation among TBRB molecules and result in an increase in the positional disorder, and hence a reduction in the hole mobility.