Effects of temperature, thickness, electron density and defect density on ZnS based solar cells: SCAPS-1D simulation

Abstract

Using real input parameters from our experimental results of ZnO:Al, ZnS, and CZTS thin films, a numerical simulation using SCAPS-1D (Solar Cells Capacitance Simulator one-dimensional) software has been performed to evaluate the solar cell characteristics by giving the variations of the short-circuit current density (Jsc), the open circuit voltage (Voc), the fill factor (FF), and the efficiency parameters. The effects of temperature, thickness, electron density, and defect density on ZnS buffer layer with different concentration has been investigated. The results show a strong dependence on the studied parameters with a maximum efficiency of 11.86 % achieved for 0.1 M concentration, 10 nm of thickness, 1 × 1014 cm−3 of defect density, 300 K of operating temperature, and 1 × 1018 cm−3 of electron density.