Abstract
Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than 70°C, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed 70°C during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.
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