Abstract
With the carrier distribution function approximated by a displaced Maxwellian function the current-voltage characteristics for a semiconductor containing repulsive Coulomb recombination centers have been derived, and the current instabilities in n-GaAs as functions of temperature and applied field have been experimentally studied. The experimental results show that the threshold current for the onset of the current instabilities is not sensitive to temperature, but the corresponding threshold field decreases with increasing temperature; and that the current oscillation frequency increases and the amplitude decreases with increasing temperature. These results are in good agreement with the theory.
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