Abstract
In this paper, we analyze the effects of temperature dependence of energy bandgap on [Formula: see text] characteristics in some carbon nanotube field effect transistors (CNTFETs) models proposed in literature in order to identify the one more suitable for computer aided design (CAD) applications. At first we consider a compact, semi-empirical model, already proposed by us, performing [Formula: see text] characteristic simulations at different temperatures. Our results are compared with those obtained with the Stanford-Source virtual carbon nanotube field-effect transistor model (VS-CNFET), obtaining [Formula: see text] characteristics comparable, but with lower CPU calculation time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
