Abstract

Isotherm, isopiestic, and vertical sections of the theoretical phase diagram for CVD (chemical vapor deposition) diamond growth are calculated. It is found that CVD diamond synthesis is restricted not only by the gas phase composition, but also by the temperature and pressure. The effects of temperature, pressure, and oxygen addition on the diamond growth region can be explained quantitatively. The calculation of the phase diagram provides a general prediction about suitable conditions for CVD diamond growth.

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