Abstract
We study on effect of frequency and temperature on capacitance (C) and conductance (G) characteristics of ZnO based Al/ZnO/p-Si (metal-insulator semiconductor (MIS)) structure. Cleaning procedures were applied before the thin film was grown, then the wafer's rough surface was sputtered 124 nm thickness with Al by the sputtering technique. After annealing once again in order to finish ohmic contact, it was coated 124 nm thickness with Al. ZnO film on the p-type silicon (100) substrate was deposited by Atomic Layer Deposition (ALD). Electrical properties of the prepared MIS structure have been researched by using temperature and frequency dependent input voltage (G-V and C–V) measurements at 100, 150, 200, 250 and 300 K temperatures for 100, 500, and 1000 kHz by using the conductance-voltage (G-V) and capacitance-voltage (C–V) measurements. We have obtained using the data, the properties of interface-state density (Dit) and the efficiency of series-resistance (Rs) have been studied.
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