Abstract
This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperature and electrode distance (between cathode and anode) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc ) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of deposition temperature and electrode distance of the i-a-Si:H layers. Results show that the optimized parameters improves the J sc of a-Si:H solar cells to 16.52 mA/cm2, yielding an excellent conversion efficiency of 10.86%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
