Abstract
Transmission electron microscope (TEM) and transmission electron diffraction studies have been performed to investigate the effects of Te doping on ordering and antiphase boundaries (APBs) in organometallic vapour phase epitaxial Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 670°C. TEM results show that the behaviour of APBs for the singular samples differs from that of the vicinal samples. The density of APBs in the vicinal samples is increased by roughly a factor of 2, whilst that of the singular samples is slightly increased, as the Te concentration increases. APBs are inclined 10–57° from the (001) growth surface. As for the singular samples, the angle seems to remain virtually unchanged with increasing doping level. However, for the vicinal samples, the angle decreases significantly with increasing concentration. A simple model is presented to explain the dopant concentration dependence of the behaviour of APBs in the ordered GaInP.
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