Effects of swift heavy ion-irradiation on magnetic properties of Co-doped TiO2

S R Kumar,Ratnesh Gupta,A C Pandey,Ajay Gupta,D M Phase

doi:10.1063/9.0000173

Abstract

Ferromagnetic Co-doped TiO2 thin films at room temperature have been synthesized by RF sputtering and ion-irradiated with 100 MeV Au ions. The surface roughness of the film increases with increasing Au-ion fluence. Kerr microscopy measurements at room temperature give isotropic hysteresis loop with negligible coercivity, which gets modified into in-plane uniaxial magnetic anisotropy after anion fluence of 5×1011 ions/cm2. Further ion-irradiation reduced the coercivity of the film. X-ray magnetic circular dichroism (XMCD) measurements have been performed in total electron yield mode, to investigate the effects of ion-irradiation on magnetic properties of the Co-doped TiO2 thin films. From the XMCD analysis, we observed that the total magnetic moment of Co atoms in case of as-deposited film is 1.771±0.016μB. After the ion-irradiation it became 0.3818±0.014μB at room temperature.

Highlights

Dilute magnetic semiconductor (DMS) oxides with Curie temperatures (TC) higher than room temperature are very much useful for their potential applications in spintronic devices and in optoelectronic devices.1–3 Low concentration of doping of transition metals with unpaired d-electrons on diamagnetic semiconductors are the best suited candidates for these purposes
Room temperature ferromagnetism has been realized in several dilute magnetic semiconductor such as ZnO, SnO2, TiO2 etc
For the possible spintronic applications, it is worth to note that doping of d-electron metals for example Co,7,8 Fe,9 Mn,10 Cu,11 Cr,12 and Ni/V13 on TiO2 shows excellent magnetic properties, as ferromagnetism with high Curie temperature higher than room temperature, among these Co-doped TiO2 is the most promising candidate because of its excellent optical transparency, thermodynamically stable at high temperature and n-type carrier mobility and the low cost of the material

Summary

INTRODUCTION

Dilute magnetic semiconductor (DMS) oxides with Curie temperatures (TC) higher than room temperature are very much useful for their potential applications in spintronic devices and in optoelectronic devices. Low concentration of doping of transition metals with unpaired d-electrons on diamagnetic semiconductors are the best suited candidates for these purposes. Dilute magnetic semiconductor (DMS) oxides with Curie temperatures (TC) higher than room temperature are very much useful for their potential applications in spintronic devices and in optoelectronic devices.. For the possible spintronic applications, it is worth to note that doping of d-electron metals for example Co, Fe,9 Mn, Cu,11 Cr, and Ni/V13 on TiO2 shows excellent magnetic properties, as ferromagnetism with high Curie temperature higher than room temperature, among these Co-doped TiO2 is the most promising candidate because of its excellent optical transparency, thermodynamically stable at high temperature and n-type carrier mobility and the low cost of the material.. Ion-implantation is an effective technique for the doping of non-magnetic semiconductors to magnetic semiconductors. We like to address the issues related with the effects of ion-irradiation on the magnetic properties of Co-doped TiO2 thin films

EXPERIMENTAL

RESULTS AND DISCUSSION

CONCLUSION