Abstract
We have studied effects of surface oxygen vacancies on electronic states of TiO 2(110), TiO 2(001) and SrTiO 3(001) surfaces by means of angle-resolved photoemission spectroscopy. The surface oxygen vacancy induces a state at ∼1 eV below the Fermi level in the bulk band gap. In the angle-resolved photoemission spectra, this state has slight energy dispersion and doesn't cross the Fermi level when the emission angle is changed. These results indicate that the state induced by surface oxygen vacancies is not simply interpreted by delocalized model, and that the localized behavior also plays an important role for the metal-insulator transition of these materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
