Abstract
The causes of extrinsic failures in time-dependent dielectric breakdown characteristics of gate oxide on C-face of 4H-SiC are examined by comparing breakdown points of tested gate oxides with the images of X-ray topography and those of differential interference contrast microscopy. We have concluded as follows: (1) surface morphological defects that originate from threading screw dislocations degrade reliability of gate oxides. (2) These surface defects are not necessarily found on every wafer. (3) Crystallographic defects are not killer defects of MOSFET per se.
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