Abstract
We report herein Cu2ZnSnS4(CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure sulfurization is drastically improved, to an efficiency of 6.75% with atmospheric pressure sulfurization.
Highlights
Photovoltaic (PV) technology using heterojunction thin film solar cells has remarkable potential to generate renewable energy
It is important to obtain a CZTS absorber layer with a morphology that consists of welldefined grain boundaries which act as less recombination sites for electrons [31]
Due to different diffusion coefficients of the elements the Kirkendall effect can be observed during low pressure sulfurization
Summary
Photovoltaic (PV) technology using heterojunction thin film solar cells has remarkable potential to generate renewable energy. Several fabrication techniques have been adopted to prepare high performance thin film solar cells by using abundant materials. The absorber layer for the thin film solar cells can be prepared by various methods like sputtering, evaporation, electrodeposition, sol gel techniques, and spray pyrolysis [1,2,3,4,5,6,7,8,9,10,11], using abundant materials such as kesterite Cu2ZnSnS4 (CZTS) [2], Cu2SnS3 [12], Cu2S [13], SnS [14], Zn3P2 [15], and hybrid perovskite CH3NH3PbI3 [16,17,18]. A detailed explanation of Raman and XRD peaks corresponding to the CZTS kesterite phase is presented
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