Abstract
The effects of sulfur passivation on HfO2/GaSb MOS capacitors (MOSCAPs) with neutralized and unneutralized (NH4)2S solutions of varied concentrations were investigated. Treatment with neutralized (NH4)2S aqueous solutions reduced the interface trap density (Dit) by ∼23%, improving the effects of sulfur passivation and producing a smoother interface compared with that obtained by treatment with unneutralized (NH4)2S aqueous solutions. The improved performance of GaSb MOSCAPs is attributed to solution neutralization rather than the change in concentration because the distributions of Dit were similar for samples treated with (NH4)2S solutions of different concentrations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
