Abstract
The effects of sulfur passivation and rapid thermal annealing on the electrical characteristics of InP metal–insulator semiconductor Schottky diodes are investigated. Passivation causes a moderate increase in barrier height and decrease in reverse current. Further reduction in the reverse current is obtained after rapid thermal annealing. The passivated diodes show a very good thermal stability. Bond formation at the interface and charge injection into the oxide are used to explain the observations.
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