Abstract
Three-inch InGaAs epilayers are grown by solid source molecular beam epitaxy using the manipulator equipped with dual-zone heaters. The effects of the substrate temperature on the uniformity of material surface morphology, indium composition, photoluminescence, electronic mobility, and background doping are investigated. As the temperature of the outer heater in the range of 625 °C to 655 °C, no dim area is observed on the edge of the material surface. At the same time, the indium composition fluctuation of the high-resolution X-ray diffraction and the photoluminescence wavelength fluctuation are less than ±0.1% for the epilayers grown at the optimum substrate temperatures.
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