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Abstract
As-doped ZnO films were prepared by co-sputtering ZnO and Zn 3As 2 targets on glass substrates at various temperatures from 250 to 500 °C. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. The films grown at temperatures from 250 to 400 °C were c-axis oriented and those deposited above 400 °C exhibited poor crystallinity. Hall measurement showed that p-type ZnO:As films were prepared at different temperatures. With increasing the substrate temperature from 250 to 500 °C, the optical band gap ( E g) first decreased, and then increased. The E g changes upon the substrate temperature were due to the effect of substrate temperature on the crystallinity of ZnO films.
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