Abstract
Ion implantation causes changes in mechanical properties such as hardness and fracture toughness on the ion-implanted surface. The purpose of this study is to experimentally investigate the effects of substrate temperature during ion implantation on the hardness and fracture toughness of an ion-implanted silicon wafer. A silicon (1 0 0) wafer was implanted by 3 MeV ions of Au and Si at different substrate temperature of 100, 200 and 300 K, respectively. After ion implantation, Vickers indentation experiments were carried out on the ion-implanted surface of the silicon wafer at room temperature. The results of the Vickers indentation tests show a significant decrease of hardness and an increase of fracture toughness of the ion-implanted silicon with decreasing the substrate temperature during ion implantation. It was found that the lower the substrate temperature during implantation, the greater the effectiveness of ion implantation on the changes in mechanical properties of the ion-implanted silicon.
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