Abstract
Effects of substrate misorientation on Zn and Si doping characteristics and band gap energy have been investigated for InGaAlP grown by low-pressure metalorganic chemical vapor deposition. The Zn concentration and the net acceptor concentration for In 0.5(Ga 0.3Al 0.7) 0.5P monotonically increased with increasing tilt angle, using (100) substrates tilted towards [011], but they at fir st decreased and next increased using (100) substrates tilted towards [011]. A similar behavior was found for the tilt angle dependence of the band gap energy of undoped In 0.5Ga 0.5P. The Si concentration and the net donor concentration of In 0.5(Ga 0.3Al 0.7) 0.5P gradually increased with increasing the substrate tilt angle, independent of the tilt direction. Neither the Zn nor the Si electrical activity depended on the substrate orientation.
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