Abstract
The effects of substrate misorientation on anisotropic electrical properties of thick InGaAs layers grown on GaAs by low-pressure metalorganic vapor phase epitaxy are studied. Hall bar samples oriented along [110] and [1̄10] were cut from layers grown simultaneously on substrates oriented (a) exactly on (001) and (b) at 2° off (001) towards [011]. In layers grown on (001) oriented substrates a very large mobility anisotropy (μ[110]/μ[1̄10]≊ 1000) is observed and attributed mainly to a lattice mismatch induced anisotropy. For the misoriented substrates, the average electron mobility increases by an order of magnitude and shows only a small residual anisotropy in the opposite direction (μ[110]/μ[1̄10] ≊ 0.7).
Published Version
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