Abstract

We have investigated the effects of the strain induced by ferroelectric poling (or the converse piezoelectric effect) on the transport properties of ${\text{LaMnO}}_{3+\ensuremath{\delta}}$ and ${\text{CaMnO}}_{3}$ thin films grown on ferroelectric $0.67\text{Pb}({\text{Mg}}_{1/3}{\text{Nb}}_{2/3}){\text{O}}_{3}\text{\ensuremath{-}}0.33{\text{PbTiO}}_{3}$ single-crystal substrates. The ferroelectric poling of the substrate gives rise to a reduction in the in-plane tensile strain of the ${\text{LaMnO}}_{3+\ensuremath{\delta}}$ film, which results in a significant decrease in the resistance and increase in the insulator-to-metal transition temperature ${T}_{P}$ of the film. The ferroelectric poling also leads to opposite effects on the magnetoresistance (MR) below and above ${T}_{P}$, namely, MR is reduced for $Tl{T}_{P}$ while MR is enhanced for $Tg{T}_{P}$. These strain effects are explained in terms of coexisting phases whose volume fractions are modified as a result of the reduction in the Jahn-Teller (JT) distortion due to ferroelectric poling. An investigation of the effects of the strain induced by the converse piezoelectric effect on the resistance of the ${\text{LaMnO}}_{3+\ensuremath{\delta}}$ and ${\text{CaMnO}}_{3}$ films shows that the resistance-strain coefficients $(\ensuremath{\Delta}R/R)/(\ensuremath{\Delta}{c}_{film}/{c}_{film})$ of the ${\text{LaMnO}}_{3+\ensuremath{\delta}}$ film is much larger than those of the ${\text{CaMnO}}_{3}$ film. This result may imply that the strain-induced modification of the electronic bandwidth alone cannot account for the large $(\ensuremath{\Delta}R/R)/(\ensuremath{\Delta}{c}_{film}/{c}_{film})$ observed in the ${\text{LaMnO}}_{3+\ensuremath{\delta}}$ film, and highlights that the strong coupling of charge carriers to JT distortion is crucial for understanding the effects of the substrate-induced strain in manganite thin films.

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