Abstract
The effect of degassing PET, PEN and PI substrates at different temperatures prior to sputter deposition of CoCr films on the film properties, and changes with degassing in the dependence of film properties on the Ar gas pressure during sputtering, were investigated. The effect of the Ar gas pressure on films varies depending on the amount of impurity gases remaining in the substrate, and degassing had a greater effect for PI substrate, which held more impurity gases, than for PET and PEN, in which fewer impurities were present.
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