Effects of structural disorders on sequential tunneling in multiple quantum wells

Abstract

Based on an isotropic random distribution model, the effects of structural disorders embedded in the barriers on the sequential electron tunneling in multiple quantum wells were studied at low temperatures. By using a sequential tunneling model [Stievenard et al., Appl. Phys. Lett. 61 (1992) 1582], the transmission coefficient through a single barrier was calculated using a finite-difference method and averaged over random configurations of disorders. To compute the tunneling current, a self-consistent calculation for the electronic states was performed, including the Hartree and exchange interactions and non-parabolic energy dispersion. Both disorder-assisted and disorder-impeded electron tunneling phenomena were found as a function of the activation energy. The effects of electric field, barrier width, and temperature were also studied. The predicted resonant disorder-assisted electron tunneling should be large enough to be observable at low temperatures in an experiment.