Abstract

Nd-doped Sr0.5Ba0.5Nb2O6 (SBN) thin films with thicknesses ranging from 15 nm to 460 nm were grown on MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies showed that the films were highly (001)-oriented and epitaxially grown on the substrates. Raman spectroscopy revealed the presence of residual stresses in the films especially for those with thicknesses below 100 nm. Transmittance and photoluminescence spectra revealed that the band-gap energies as well as the light-induced emission bands were shifted to higher energies as the film thickness decreased. The Nd3+ emission lines in the films were also dependent on film thickness. Origins of these observations were discussed based upon the stress as well as grain size effects.

Highlights

  • INTRODUCTIONIt is desired to fabricate thin film devices as thin as possible

  • For miniaturization of devices, it is desired to fabricate thin film devices as thin as possible

  • The correlation between film thickness and induced stress in epitaxial Nd-doped SBN thin films were studied by micro-Raman spectroscopy

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Summary

INTRODUCTION

It is desired to fabricate thin film devices as thin as possible. Effects of film thickness on its properties are crucial issue in dealing with thin film devices. Sr0.5Ba0.5Nb2O6 (SBN), with a tetragonal tungsten-bronze (TTB) structure, is an important lead-free relaxor ferroelectric material in the area of photonics. The physics involved in this relaxor ferroelectric thin film is interesting especially when the thickness is below its threshold. The correlation between film thickness and induced stress in epitaxial Nd-doped SBN thin films were studied by micro-Raman spectroscopy. Nanocrystallines.[13] less attention has been paid to the effects of film thickness on the luminescence properties of rare-earth (RE) doped ferroelectric films. Spectral properties of Nd-doped SBN thin films with different thicknesses were investigated by PL measurements. Our results showed that film thickness considerably influences the luminescence properties of the Nd3+ ions

EXPERIMENTAL
X-ray diffraction
Stresses in the films evaluated by micro-Raman spectroscopy
Band-gap energy and PL properties
CONCLUSIONS
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