Abstract
InP layers have been grown on epi-ready InP:Fe substrates by metalorganic vapour phase epitaxy (MOVPE). Hall measurements show an influence of the storage time of wafers on the electrical properties of the grown epitaxial layers. Hall data and electrochemical capacitance-voltage (ECV) profiles document an increase of donors at the substrate-epilayer interface for longer storage times. They also point to the existence of deep donors at the interface. The concentration of deep donors can be associated with the high oxygen level at the interface detected by secondary ion mass spectroscopy (SIMS). Ellipsometry proves that the oxide layer grows in thickness with time. Even after only four months of storage it was not possible to completely remove this oxide layer by thermal annealing under phospine.
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