Effects of stacking sequence on the electrical conductivity of InAs: A combination of density functional theory and Boltzmann transport equation calculations

Abstract

The effects of the stacking sequence on the electrical conductivity of InAs are theoretically investigated using a combination of density functional theory and Boltzmann transport equation calculations. The calculations within the constant-relaxation-time approximation demonstrate that the electrical conductivity for n-type InAs with wurtzite segments is ∼47% larger than that with zinc blende structure. In contrast, the conductivity for p-type InAs with zinc blende structure is three times larger than those with wurtzite segments owing to the difference in the electronic states ∼0.1 eV below the valence band maximum depending on the staking sequence. The results within the constant-relaxation-time approximation suggest that differences in the stacking sequence along the growth direction could affect the electrical conductivity of InAs nanowires.