Effects of spin accumulation on single-electron tunneling in a double ferromagnetic microjunction

Abstract

Electron tunneling in a double microjunction, in which one electrode isnon magnetic while the second electrode and metallic island are ferromagnetic,is analysed theoretically in the Coulomb blockade regime. The limit of fastintrinsic spin relaxation on the island (no spin accumulation) is compared withthe limit of slow spin relaxation (maximum spin accumulation). It is shown thatspin accumulation leads to a strong dependence of the Coulomb "staircase” on themagnetic configuration of the junction and, consequently, to a number of neweffects.