Abstract
We present an analysis of the high-speed characteristics of quantum well lasers by simultaneously considering the effects of spectral hole burning, carrier heating, and carrier transport. An exact form of the small-signal modulation response is obtained. The effects of carrier dephasing time in spectral hole burning, energy relaxation time in carrier heating, and diffusion-capture-escape times in carrier transport on the modulation response of quantum well lasers are theoretically investigated.
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