Abstract

The electrical conductivity of undoped (125, 332 and 545 μm-thick) and Cr 3+ doped (332 μm-thick) α-Al 2O 3 single crystals was measured under electron irradiation at temperatures from 300 to 723 K. The conductivity under the ITER environment is found to be less than the limiting conductivity of 10 −4 S/m required for insulators in ITER. Although the Cr 3+ doping increases the electrical conductivity, it suppresses the radiation induced conductivity at higher ionization fields. The impurities in Cr 3+ doped α-Al 2O 3 are acting as trapping sites or recombination centers for carriers, affecting the electrical resistivity. The radiation induced conductivity in undoped α-Al 2O 3 increases with increasing specimen thickness, which is explained in terms of the increase of energy absorption with increasing specimen thickness. No radiation induced electrical degradation was found in both undoped and Cr 3+ doped α-Al 2O 3 in the present study.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.