Abstract
The diffusion of metal impurity into a doped semiconductor crystal of finite size was studied taking into account dissociative and kick-out mechanisms simultaneously. Equations for the determination of critical sample thicknesses and temperature were obtained, when one diffusion transfer mechanism (regime) is replaced by another. For the Au-Si system the ranges of existence for these regimes are determined. For large time values the equivalence of diffusive-kinetic and purely kinetic descriptions of impurity diffusion in the crystal is shown.
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