Abstract
The solvent effects on the back channel of InGaZnO (IGZO) thin-film transistors (TFTs) were investigated. IGZO-TFTs with methanol treatment on the back channels exhibited higher mobility, smaller subthreshold swing, and smaller hysteresis in the transfer curves compared to those without treatment. Systematic studies showed that methanol treatment can reduce the loosely bound oxygen impurities, and reduce the surface energy of the IGZO films. As a result, the air adsorption/desorption effect on the TFT back channel was reduced greatly, leading to higher mobility and stability.
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