Effects of Sn-ion irradiation on local structure and flux pinning properties of MgB2 thin films

Abstract

We studied the effects of tin (Sn) ion irradiation on the local structure and flux pinning properties of 412-nm-thick MgB2 thin films. Ions with 2 MeV incident energy were irradiated onto MgB2 thin films at room temperature and various dose levels from 2 × 1012 to 7 × 1013 atoms/cm2. X-ray diffraction and extended X-ray absorption fine-structure results confirmed extended average bond lengths and increased mean-square relative displacement that correlated with crystalline disorder serving as artificial pinning centers induced by ion irradiation. While the superconducting transition temperature (Tc) exhibited a decreasing trend, the magnetization Jc (H) of the irradiated films measured at both 5 K and 20 K were remarkably enhanced compared to that of pristine films at high applied magnetic fields. The decreases in exponent β from 1.1 and 1.13 to 0.69 and 0.62 after irradiation at 5 K and 20 K, respectively, as the dose increased to 5 × 1013 atoms/cm2 indicates a shift in the pinning mechanism from weak collective pinning to strong plastic pinning according to collective pinning theory. In addition, the scaling behavior of the flux pinning force density (Fp) in the irradiated MgB2 films showed a crossover from surface pinning to normal point pinning. These results suggest that intermediate-energy irradiation by heavy ions such as Sn generates effective pinning sources for improving Jc(H) in MgB2 superconductors.