Abstract
We have investigated the etching characteristics of Si{110} planes in aqueous potassium hydroxide (KOH) solutions containing ppb-level of Cu and Pb. It is found that ppb-level of Cu roughens the silicon surface and the etching rate is changed by ppb-level of Cu and Pb. The effects of Cu and Pb can be explained by the interaction between ions and hydrogen gas generated during etching based on oxidation–reduction potentials of Cu, Pb and H.
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