Abstract

We investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths. Larger chips exhibited lower forward voltages because of their lower series resistances. A larger chip helped to realize a longer emission wavelength, narrower full-width at half maximum, and higher external quantum efficiency. However, temperature-dependent electroluminescence measurements indicated that larger chips are detrimental to applications where high temperature tolerance is required. In contrast, a smaller red LED chip achieved a high characteristic temperature of 399 K and a small redshift tendency of 0.066 nm K−1, thus showing potential for temperature tolerant lighting applications.

Highlights

  • Much effort has been devoted to improving InGaN-based red light-emitting diodes (LEDs) with approaches including InGaN quantum dots,[8] a semipolar InGaN buffer layer,[9] lattice-matched InGaN/ScAlMgO4(0001) templates,[10] and InGaN/GaN nanowires.[11,12] Our high-temperature

  • We investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths

  • This work examines the effect of size on device performance using different rectangular chips on the same InGaN-based red LED wafer

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Summary

Introduction

Much effort has been devoted to improving InGaN-based red LEDs with approaches including InGaN quantum dots,[8] a semipolar InGaN buffer layer,[9] lattice-matched InGaN/ScAlMgO4(0001) templates,[10] and InGaN/GaN nanowires.[11,12] Our high-temperature. ABSTRACT We investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths.

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