Effects of silylation on fracture and mechanical properties of mesoporous silica films interfaced with copper

Abstract

Mesoporous silica (MPS) films are attractive for isolating Cu wiring in nanodevices but are susceptible to pore wall collapse and water and metal uptake. Pore-sealing and chemical passivation with molecular surfactants are potential solutions that could address these challenges. Here, we show that silylated MPS films capped with a Cu overlayer fracture near the Cu/MPS interface at a distance that correlates with the Cu penetration depth into MPS. Pristine MPS films fracture farther from the MPS/Cu interface than silylated MPS, where silylation-induced pore passivation hinders Cu penetration. Silylation also lowers the tensile stress and the fracture toughness of MPS films, but the relative extent of the decreases in these properties decreases the overall driving force for cracking. Such effects of molecular passivation on metal penetration, film stress, and fracture toughness and pathways are important for engineering stable porous dielectrics for nanodevice wiring structures.