Abstract

In this study, silicon (Si) was doped on a tetrahedral amorphous carbon (ta-C) coating and the tribological characteristics of the resulting Si-doped diamond-like carbon (DLC; a-C:Si:H) were investigated against a SUJ2 ball. The Si fraction in the coating was varied from 0 to ~ 20 at.% by increasing the trimethylsilane gas flow rate during filtered cathodic vacuum arc deposition. The coefficient of friction (CoF) showed no obvious change when the Si fraction was less than ~ 7 at.%. However, after Si doping, it significantly decreased when the Si fraction was greater than ~ 8 at.%. The running-in period also decreased to less than 1000 cycles after Si doping. The rapid formation of Si-rich debris and transfer layer led to the fabrication of a low-friction tribofilm, which was induced by the tribochemical reaction with moisture under ambient conditions. When the Si fraction was ~ 17 at.%, the lowest CoF of less than 0.05 was obtained. Further Si doping beyond the critical point led to the destruction of the film because of reduced hardness.

Highlights

  • In this study, silicon (Si) was doped on a tetrahedral amorphous carbon coating and the tribological characteristics of the resulting Si-doped diamond-like carbon (DLC; amorphous carbon with hydrogen (a-C):Si:H) were investigated against a SUJ2 ball

  • A decrease in the surface roughness could be attributed to the change in the deposition mechanism and a shorter processing time, which resulted in a higher deposition rate when the TMS gas was used for doping Si on the DLC coating

  • When filtered cathodic vacuum arc (FCVA) was used without the TMS gas for pure tetrahedral amorphous carbon (ta-C) deposition, ionized carbon plasma was directly deposited on the surface of WC samples

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Summary

Introduction

Silicon (Si) was doped on a tetrahedral amorphous carbon (ta-C) coating and the tribological characteristics of the resulting Si-doped diamond-like carbon (DLC; a-C:Si:H) were investigated against a SUJ2 ball. When the TMS gas flow rate was increased from 0 to 12 sccm, the roughness decreased from 0.06 μmRq to 0.008 μmRq. the peak-to-valley distance (Rt) clearly decreased from 1.14 μmRt to 0.22 μmRt. This reduction in the surface roughness could effectively decrease the abrasive friction and wear, thereby eliminating mechanical interlocking. A decrease in the surface roughness could be attributed to the change in the deposition mechanism and a shorter processing time, which resulted in a higher deposition rate when the TMS gas was used for doping Si on the DLC coating.

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