Abstract
The effects of silica slurry temperature on the chemical mechanical polishing (CMP) performance of tetraethyl orthosilicate (TEOS) film were investigated. Slurry showed the following dependences of temperature: pH decreased slightly; conductivity showed an increase of 1.88% per degree; the dispersion ability of abrasive particles was improved; the particle size of silica slurry decreased; removal rate significantly increased from 10–40°C and was maintained constant beyond 40°C. An increasing amount of hydroxyl (OH-) groups diffused into the TEOS, and weakened reactants, such as H–C–O–Si bonds on the surface of TEOS film, were actively generated with increasing slurry temperature, which could be removed easily.
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