Abstract
Tobacco (Nicotiana tabacumL.) is able to accumulate cadmium in leaves and reduction of cadmium content can reduce health hazards to smokers. In the present study, the influence of silicon on the growth, yield and the content and distribution of cadmium (Cd) in flue-cured tobacco plants in the presence of cadmium was investigated by pot experiment. The results showed that Cd reduced the growth of both shoots and roots. Application of Si significantly increased the dry weight of roots and shoots in flue-cured tobacco grown in Cd contaminated soils, but not the largest leaf area. Si reduced the Cd concentration and accumulation in the root, stem and leaf of flue-cured tobacco compared with Cd alone. Si restricted the transport of Cd from roots to shoots. These results demonstrate that 1 and 2 g/kg Si could enhance Cd tolerance in flue-cured tobacco and decrease of Cd accumulation in plant and Cd translocation to shoots.
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