Abstract
We propose a new interface structure of SiAsBeAs for eliminating the charge imbalance of GaAs on Si. We studied the effects of this chalcopyrite-type interface structure on the initial stages of GaAs MBE growth on Si (111) surfaces using RHEED and UPS measurements. It is found that GaAs growth proceeds in a layer-by-layer mode at the initial stages on this charge balanced surface.
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