Abstract
tunnel barriers with a residual layer of different thicknesses were fabricated by thermally oxidizing film. According to leakage current measurements, the effective barrier height was significantly lowered because the middle layer has a lower bandgap than , which is beneficial in increasing the erasing/programming speed in flash memory devices. However, detrimental effects, such as the increased hysteresis in capacitance-voltage characteristics and the degraded breakdown distribution, were observed due to the significant amount of the charge trapping induced by the increased thickness. For the sample with a distinctive layer, trap-assisted tunneling and Fowler-Nordheim tunneling were the dominant conduction mechanisms at low and high electric field, respectively. However, the accumulation of N at the interface for the fully oxidized sample resulted in an asymmetric conduction mechanism behavior, which was explained by the band diagram analysis.
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