Abstract
Recombination dynamics of intense near-UV luminescence from InxGa1−xN (x⩽0.1) ternary alloy epitaxial layers, especially from Si-doped ternary alloy layers, has been studied by means of time-resolved spectroscopy. The intensity of the near-UV luminescence from Si-doped layers was approximately one order of magnitude stronger than that from undoped layers. Furthermore, an additional sharp luminescence line was observed under high-density excitation only from the Si-doped layers. The effects of Si-doping on the optical properties of InxGa1−xN layers are discussed.
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