Effects of Si 4+ and B 3+ doping on the photoluminescence of BaMgAl 10O 17:Eu 2+ phosphor under UV and VUV excitation

Abstract

Si 4+ and B 3+ were doped into the spinel block of blue-emitting BaMgAl 10O 17:Eu 2+ phosphor. Their photoluminescence, such as emission characteristic and thermal stability, were investigated under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation. The results showed that proper quantities of Si 4+ or B 3+ doping could obviously improve the emission intensity. However, the thermal stability of Si 4+ or B 3+ doped phosphors was worse than that of undoped samples. Based on lattice defect theory, the mechanisms of these interesting phenomena were discussed and explained, which revealed that the thermal degradation of BaMgAl 10O 17:Eu 2+ had great correlation with the lattice environment.