Abstract
We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.
Highlights
Molecular beam epitaxy (MBE) is an ideal method to grow nano-structures
MBE allows for the controlled growth of films with sharp doping profiles and different chemical compositions changing over a spatial depth of several angstroms
It can be seen that growth rate (GR) was initially low and increased with growth time (GT) by a factor of up to 14% during GT testing
Summary
Molecular beam epitaxy (MBE) is an ideal method to grow nano-structures. Self-organized effects can be applied for growing the nano-structures with controlled dimensions that are in the growth direction (thickness) and laterally in the plane of the growth surface. These nano-structures are well known as quantum wells (QWs), quantum wires, and quantum dots (QDs). When their sizes are decreased, the quantum confinement effect becomes the dominant contribution to their electric and optical properties. Because quantum confinement energy is inversely proportional to size (1/L), accuracy of size is very important to fabricate the nano-structures
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